Crystal growth by solvent techniques and characteristic properties of CdTe

Abstract

Optimum growth conditions to grow pure single crystals from Te-rich solution by the Traveling Heater Method are investigated. For the growing apparatus employed, the optimum conditions are determined to be a growth temperature of 650 °C and a growth rate of 3 mm/day. The room temperature resistivity which we obtain in undoped p-type crystals extends to nearly 106 Ω.cm. When the Cd pressure over the Te solution is controlled during crystal growth, the room temperature resistivity can be increased to 8 × 106 Ω.cm. Characterization of the crystals grown by the Traveling Heater Method is also carried out by means of carrier transport and photoluminescence measurements, and it can be shown that under an appropriate Cd pressure, excellent crystals with good transport properties for both electrons and holes are obtained