High voltage electron microscopy of interfacial defects in GaAs
- 1 January 1972
- journal article
- Published by Elsevier in Materials Science and Engineering
- Vol. 10, 53-61
- https://doi.org/10.1016/0025-5416(72)90065-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Electron microscopy at high voltagesPhilosophical Magazine, 1968
- Bulk negative-resistance semiconductor devicesIEEE Spectrum, 1967
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- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958