Control of valence states by a codoping method in CuInS2
- 31 December 1997
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 49 (1-4), 391-397
- https://doi.org/10.1016/s0927-0248(97)00115-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- P-Type Doping of the Group V Elements in CuInS2Japanese Journal of Applied Physics, 1996
- Electronic Structures and Effects of S Substitutions in CuIn(S0.875X0.125)2 (X=O, N, P, C, SiorB)Japanese Journal of Applied Physics, 1996
- Surfactant modified growth of CuInSe2 thin filmsApplied Surface Science, 1996
- Physics and Control of Conduction Type in CuInS2with Defect Chalcopyrite StructureJapanese Journal of Applied Physics, 1995
- Valence manipulation and homojunction diode fabrication of chalcopyrite structure CuInSe thin filmsThin Solid Films, 1993
- Theory of the band-gap anomaly inchalcopyrite semiconductorsPhysical Review B, 1984
- Cohesive properties of metallic compounds: Augmented-spherical-wave calculationsPhysical Review B, 1979
- A local exchange-correlation potential for the spin polarized case. iJournal of Physics C: Solid State Physics, 1972
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965