Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasers
- 1 November 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (11), 1259-1266
- https://doi.org/10.1109/jqe.1984.1072310
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- High-power multiple-stripe injection lasers with channel guidesIEEE Journal of Quantum Electronics, 1982
- Lateral beam collimation of a phased array semiconductor laserApplied Physics Letters, 1982
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Room-temperature operation of a transverse-distributed-feedback cavity laserElectronics Letters, 1982
- Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasersElectronics Letters, 1982
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- New Restricted Contact LEDs Using a Schottky BarrierJapanese Journal of Applied Physics, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionIEEE Journal of Quantum Electronics, 1979