Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

Abstract

We have investigated the effect of substrate temperature on the reaction between Si and Pd‐W and Pt‐W alloys by I‐V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100 °C during the deposition of W‐rich Pd₂₀W₈₀ alloys, Schottky contacts of Pd₂Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300 °C enables the formation of PtSi during the depostion of W‐rich Pt₂₀W₈₀ alloys. For Pd‐rich Pd₈₀W₂₀ and Pt‐rich Pt₈₀W₂₀ alloys, the substrate‐temperature effect is not as significant as for the W‐rich alloys.