The influence of feedback intensity on longitudinal mode properties and optical noise in index-guided semiconductor lasers
- 1 October 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (10), 1163-1169
- https://doi.org/10.1109/jqe.1984.1072281
Abstract
Theory and experiments on optical feedback effects in index-guided single-mode semiconductor lasers are presented. Evidence is found for the existence of a characteristic parameterCwhich indicates the relative strength of the optical feedback. Near the transition (C \approx 1.0) from low to high feedback, the feedback-induced low-frequency intensity noise shows a maximum. At higher feedback hysteresis and instabilities are dominant, whereas the feedback-induced noise is low again.Keywords
This publication has 15 references indexed in Scilit:
- On the theory of a single-mode laser with weak optical feedbackPhysica B+C, 1984
- Phase noise characteristics of single mode semiconductor lasers with optical feedbackApplied Physics Letters, 1984
- Influence of an external cavity on semiconductor laser phase noiseApplied Physics Letters, 1983
- Low-frequency mode-hopping optical noise in AlGaAs channeled substrate lasers induced by optical feedbackIEEE Journal of Quantum Electronics, 1983
- Influence of optical feedback on laser frequency spectrum and threshold conditionsIEEE Journal of Quantum Electronics, 1983
- Measurement of the linewidth enhancement factor α of semiconductor lasersApplied Physics Letters, 1983
- Spectral linewidth reduction in semiconductor lasers by an external cavity with weak optical feedbackElectronics Letters, 1983
- Experimental investigation of stability properties for a semiconductor laser with optical feedbackElectronics Letters, 1983
- Oscillation center frequency tuning, quantum FM noise, and direct frequency characteristics in external grating loaded semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Low-frequency noise characteristics of channel substrate planar GaAlAs laser diodesApplied Physics Letters, 1981