Conductivity in transparent anatase TiO2 films epitaxially grown by reactive sputtering deposition
- 31 December 2003
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (12), 2275-2278
- https://doi.org/10.1016/s0038-1101(03)00210-7
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium DioxideScience, 2001
- In situ growth of evaporated TiO2 thin films using oxygen radicals: Effect of deposition temperatureJournal of Vacuum Science & Technology A, 1998
- Electronic conduction above 4 K of slightly reduced oxygen-deficient rutilePhysical Review B, 1996
- Phase development in sputter deposited titanium dioxideJournal of Vacuum Science & Technology A, 1996
- Nucleation and growth in TiO2 films prepared by sputtering and evaporationThin Solid Films, 1994
- Optical properties of anatase (TiO2)Solid State Communications, 1994
- High mobility n-type charge carriers in large single crystals of anatase (TiO2)Journal of Applied Physics, 1994
- Electrical properties of Cr- and Nb-doped TiO2 thin filmsApplied Surface Science, 1993
- The effect of substrate temperature on the properties of sputtered titanium oxide filmsApplied Surface Science, 1993
- Electron transport properties in rutile from 6 to 40 KJournal of Applied Physics, 1983