Formation of domains on reconstructed structure in Si(110) vicinal surfaces
- 2 August 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 187 (1), L606-L610
- https://doi.org/10.1016/s0039-6028(87)80109-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Low energy scanning electron microscopy combined with low energy electron diffractionSurface Science, 1986
- Atomic configuration of hydrogenated and clean Si(110) surfacesPhysical Review B, 1986
- Surface Reconstruction on a Clean Si(110) Surface Observed by RHEEDJapanese Journal of Applied Physics, 1986
- UHV-SEM observations of cleaning process and step formation on silicon (111) surfaces by annealingSurface Science, 1985
- Adsorption of bismuth on Si(110) surfacesSurface Science, 1981
- Phase transitions on clean Si(110) surfacesSurface Science, 1977
- Chemisorption of atomic hydrogen on the silicon (110) 5 x 1 surface (UPS and LEED)Physics Letters A, 1976
- Energy-Level Spectra of Electrons at the (111), (110), and (100) Surfaces of Silicon and Germanium by Ion-Neutralization SpectroscopyPhysical Review B, 1973
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965