The Applicability of Light‐Microscopical Methods for the Investigation of Dislocation Structure in Semiconductors
- 1 January 1979
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 14 (7), 887-894
- https://doi.org/10.1002/crat.19790140715
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Stress-induced birefringence of mismatching III-V heterojunctionsPhysica Status Solidi (a), 1976
- Direct Observation of Dislocations in a LEC-GaP Crystal by Light Scattering MethodJapanese Journal of Applied Physics, 1976
- Climb trails at dislocations in gadolinium gallium garnet (Gd3Ga5O12)Physica Status Solidi (a), 1975
- Line defects in barium titanate observed by polarized light microscopyPhilosophical Magazine, 1973
- Application of the photoelasticity method to the investigation of stresses around individual dislocations and their influence on crystal propertiesPhysica Status Solidi (a), 1970
- Precipitates Induced in GaAs by the In-Diffusion of ZincJournal of the Electrochemical Society, 1967
- The Laser as a Light Source for Ultramicroscopy and Light Scattering by Imperfections in Crystals. Investigation of Imperfections in LiF, MgO, and RubyJournal of Applied Physics, 1966
- Study of Copper Precipitation Behavior in Silicon Single CrystalsJournal of the Electrochemical Society, 1961
- Birefringence Caused by Edge Dislocations in SiliconPhysical Review B, 1958
- Photographs of the Stress Field Around Edge DislocationsPhysical Review B, 1956