XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon
- 16 March 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 76 (1), K21-K24
- https://doi.org/10.1002/pssa.2210760153
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The formation of SiO2 films on silicon by high dose oxygen ion implantationThin Solid Films, 1982
- Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopyPhysica Status Solidi (a), 1981
- TEM, AES and XPS Studies of Si Layer on Buried SiO2 Layer Formed by High-Dose Oxygen Ion-ImplantationJapanese Journal of Applied Physics, 1980
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal siliconThin Solid Films, 1978
- Spectrophotometric Thickness Measurement for Very Thin SiO2 Films on SiJournal of Applied Physics, 1970