Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects
- 1 December 1998
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 80 (1-4), 109-113
- https://doi.org/10.1016/s0022-2313(98)00077-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Silicon-based visible light-emitting devices integrated into microelectronic circuitsNature, 1996
- Conduction and Valence Band Edges of Porous Silicon Determined by Electron TransferJournal of the American Chemical Society, 1996
- Energy Transfer Quenching of Porous Si Photoluminescence by Aromatic MoleculesJournal of the American Chemical Society, 1995
- Dynamic Quenching of Porous Silicon Photoluminescence by Anthracene and 10-MethylphenothiazineChemistry of Materials, 1995
- Rôle of dielectric effects in the red-green switching of porous silicon luminescenceJournal de Physique I, 1994
- In Situ Measurements of Water Immersion and UV Irradiation Effects on Intensity and Blue Shift of Visible Photoluminescence in Porous SiJapanese Journal of Applied Physics, 1994
- Chemical Modification of the Photoluminescence Quenching of Porous SiliconScience, 1993
- Proton gated emission from porous siliconJournal of the American Chemical Society, 1993
- Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma ChamberJapanese Journal of Applied Physics, 1993
- Luminescence Activation of Porous Silicon by Post-Anodization TreatmentMRS Proceedings, 1992