Strain-induced island scaling during Si1−xGex heteroepitaxy
- 12 January 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2), 179-181
- https://doi.org/10.1063/1.120622
Abstract
We investigated the composition-dependent size of pseudomorphic Si1−xGex islands on Si(001). Si1−xGex layers with 0.05⩽x⩽0.54 were deposited from metallic solution. The island growth occurs near thermodynamic equilibrium and facilitates a comparison of the results with predictions based on energetics. We find pseudomorphic islands with base widths ranging from several μm to a few nm. We show that it is possible to adjust the island size by simply choosing the appropriate layer composition. Varying deposition temperatures and growth velocities do not affect the scaling behavior.Keywords
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