Low-energy ion bombardment of silicon dioxide films on silicon. II. Inert ambient annealing of degradation in MOS devices
- 1 July 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (7), 3182-3190
- https://doi.org/10.1063/1.1662729
Abstract
No abstract availableKeywords
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- Theory of Auger Ejection of Electrons from Metals by IonsPhysical Review B, 1954