Characterization of plasma-deposited microcrystalline silicon
- 1 July 1982
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 46 (1), 1-12
- https://doi.org/10.1080/13642818208246419
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- (Invited) Growth and Characterization of Amorphous Hydrogenated SiliconJapanese Journal of Applied Physics, 1982
- Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H FilmsJapanese Journal of Applied Physics, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °CApplied Physics Letters, 1980
- Time resolved photoluminescence near the “band gap” in amorphous siliconSolid State Communications, 1979
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- (Invited) Characterization of Plasma-Deposited Amorphous Si: H Thin FilmsJapanese Journal of Applied Physics, 1979
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955