Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements

Abstract

1 µm-long vertical-type amorphous-silicon field-effect transistors with small parasitic elements have been fabricated and evaluated. Field-effect mobility, mutual conductance and input capacitance per unit channel width were 0.1 cm²/Vs,10 µS/mm and 0.55 pF/mm, respectively. Cut-off frequency evaluated from these values was 3 MHz.