Diode characteristics of Li3N-diffused ZnSe grown by MOVPE
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4), 503-506
- https://doi.org/10.1016/s0022-0248(96)00616-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p-type ZnTeApplied Physics Letters, 1995
- Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting LasersJapanese Journal of Applied Physics, 1995
- Novel nitrogen source materials in zinc selenide metalorganic chemical vapor depositionJournal of Crystal Growth, 1994
- The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSeJournal of Crystal Growth, 1994
- Ohmic contacts top-type ZnSe using ZnTe/ZnSe multiquantum wellsElectronics Letters, 1993
- Graded band gap ohmic contact to p-ZnSeApplied Physics Letters, 1992
- Ti/Pt/Au Ohmic Contacts to n-Type ZnSeJapanese Journal of Applied Physics, 1992
- MOVPE growth of p-type ZnSe using dimethylaminolithium as the dopantJournal of Crystal Growth, 1992
- Electromigration in p-type ZnSe:LiApplied Physics Letters, 1991
- Models for contacts to planar devicesSolid-State Electronics, 1972