Ion implant profiles in garnet films

Abstract

Chemical etch rate and magnetization profiles of neon implanted LPE garnet films were obtained by successively etching thin layers and measuring both weight loss and soft bubble collapse fields. Implant energies and doses in the ranges 60 to 160 keV and .5 to 10×10¹⁴ cm⁻², respectively, were used. Etch rate profiles are similar in shape to typical implanted ion distributions with a maximum for 100 keV at .06μm from the original surface and the bulk film etch rate reached at .2μm. The bubble collapse field increases with dosage up to 2×10¹⁴ cm⁻² then decreases. For the higher dosages, a profile is observed in which the collapse field is independent of thickness through most of the implanted layer. It appears that the damage, which causes the increase in etch rate, eventually creates a non‐magnetic layer. Annealing restores magnetization and reduces crystallographic damage.