Electron beam annealing of zinc implanted GaAs to control profile broadening
- 1 January 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (4), 175-177
- https://doi.org/10.1049/el:19840117
Abstract
Highly doped P+ layers have been obtained by using multiply scanned electron beam annealing. The diffusion of the zinc was controllable at temperatures above 900°C if anneal times were less than 3 s.Keywords
This publication has 1 reference indexed in Scilit:
- Implantation of Be, Cd, Mg and Zn in GaAs and GaAsl-xPxPublished by Springer Nature ,1977