Growth of InP on Si substrates by molecular beam epitaxy
- 9 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (2), 140-142
- https://doi.org/10.1063/1.101209
Abstract
The growth of single‐crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas‐source MBE in order to reduce the density of dislocations created by the 8% InP‐Si lattice mismatch. Double‐crystal x‐ray diffraction revealed that all buffer layers produced large‐area single‐crystal (100) InP films with the InP lattice tilted towards the 〈100〉 Si directions. A buffer layer of four Inx Ga1−x P/Iny Ga1−y P strained superlattices produced a specular InP film with an estimated dislocation density of 108–109 cm−2 and a residual stress of less than 5×10−4.Keywords
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