Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low-pressure metalorganic vapor phase epitaxy

Abstract

Heteroepitaxial growth of InP on ZnSe‐coated Si substrates by low‐pressure metalorganic vapor phase epitaxy is reported for the first time. Single‐crystal InP epilayers with specular surfaces can be obtained. The ZnSe buffer layer, which is evaporated onto the Si substrate in another furnace, is effective in reducing the magnitude of strain in the InP layer. The best room‐temperature electron mobility of the undoped InP epilayer can reach 3100 cm² /(V s) with a carrier concentration of 1.5×10¹⁵ cm⁻³ . It was found that the InP electron mobility is critically dependent on the ZnSe buffer‐layer thickness. The efficient photoluminescence compared with that of InP homoepitaxy indicates that the InP heteroepilayer is of high optical quality.