High Mobility Pentacene Thin-Film Transistors on Photopolymer Modified Dielectrics

Abstract

An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm² V^-1 s^-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1 J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm² V^-1 s^-1.