Growth conditions and crystal structure parameters of layer compounds in the series SnxZr1−xS2
- 1 March 1973
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 8 (3), 245-252
- https://doi.org/10.1016/0025-5408(73)90001-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniquesJournal of Crystal Growth, 1972
- Crystal Data for Layer Compounds in the Series SnSxSe2−xPhysica Status Solidi (a), 1971
- Negative resistance and switching effect in the single crystal layer compounds SnS2 and ZrS2Solid State Communications, 1969
- Preparation and optical properties of group IV–VI2 chalcogenides having the CdI2 structureJournal of Physics and Chemistry of Solids, 1965
- Crystal growth by chemical transport reactions—IJournal of Physics and Chemistry of Solids, 1961
- The growth of single crystals of binary and ternary chalcogenides by chemical transport reactionsJournal of Physics and Chemistry of Solids, 1960