A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide
- 23 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 459-462
- https://doi.org/10.1109/iedm.1997.650423
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technologyThin Solid Films, 1990
- Tungsten silicide/titanium nitride compound gate for submicron CMOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990