ION-IMPLANTATION DAMAGE IN THIN METAL FILMS

Abstract

Implantation of Ne⁺, P⁺, and As⁺ (45 and 90 keV, dose = 1 × 10¹⁶ cm⁻²) into thin films of Al, Al–Cu, and Ag produce severe damage that results in more rapid material transport during electrical stress than in unimplanted films. Resistivity ratio measurements, i. e., resistivity at 297 and 4.2 °K, appear to be sensitive indicators of this damage.