Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films
- 18 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (20), 1450-1452
- https://doi.org/10.1063/1.97798
Abstract
Electron spin resonance measurements of silicon‐on‐insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer. The 29Si central hyperfine interaction and the 29Si superhyperfine interaction with neighboring Si atoms are resolved. The results are very close to those for the Pb center at the Si‐thermal oxide interface and recent theoretical calculations.Keywords
This publication has 16 references indexed in Scilit:
- EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+implantationJournal of Physics C: Solid State Physics, 1986
- Dipolar interactions between dangling bonds at the (111) Si-interfacePhysical Review B, 1986
- EPR of defects in silicon-on-insulator structuresRadiation Effects, 1986
- Strain broadening of the dangling-bond resonance at the (111)Si-interfacePhysical Review B, 1986
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985
- Silicon-on-insulator by oxygen ion implantationJournal of Crystal Growth, 1983
- EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster ()Physical Review B, 1973
- Electron paramagnetic resonance of the lattice damage in oxygen-implanted siliconJournal of Applied Physics, 1972
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964