Silicon-on-insulator by oxygen ion implantation
- 2 October 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 63 (3), 554-558
- https://doi.org/10.1016/0022-0248(83)90167-7
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Microstructural defects in laser recrystallized, graphite strip heater recrystallized and buried oxide silicon-on-insulator systems: A status reportJournal of Crystal Growth, 1983
- Study of buried silicon nitride layers synthesized by ion implantationJournal of Applied Physics, 1980
- TEM, AES and XPS Studies of Si Layer on Buried SiO2 Layer Formed by High-Dose Oxygen Ion-ImplantationJapanese Journal of Applied Physics, 1980
- Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1980
- Charges at a laser-recrystallized-polycrystalline-silicon/insulator interfaceIEEE Electron Device Letters, 1980
- C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristicsThin Solid Films, 1976
- Epitaxial silicon layers grown on ion-implanted silicon nitride layersApplied Physics Letters, 1973
- Isolating surface layers on metallic conductors produced by ion bombardmentThin Solid Films, 1969
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966