The detrimental influence of stacking faults on the refresh time of MOS memories
- 28 February 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (2), 135-140
- https://doi.org/10.1016/0038-1101(79)90105-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974
- Electrically Active Stacking Faults in SiliconJournal of the Electrochemical Society, 1973
- The influence of stacking faults on leakage currents of FET devicesMicroelectronics Reliability, 1971
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967