High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
- 15 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (3), 335-337
- https://doi.org/10.1063/1.1339264
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)Journal of Crystal Growth, 2000
- High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammoniaApplied Physics Letters, 1999
- AlGaN/GaN heterostructures on insulating AlGaN nucleation layersApplied Physics Letters, 1999
- Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical propertiesJournal of Crystal Growth, 1999
- High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1999
- GaN on Si Substrate with AlGaN/AlN Intermediate LayerJapanese Journal of Applied Physics, 1999
- Self-limitation of AlGaN/GaN quantum well energy by built-in polarization fieldApplied Physics Letters, 1999
- Electron mobility in modulation-doped AlGaN–GaN heterostructuresApplied Physics Letters, 1999
- Multicolored light emitters on silicon substratesApplied Physics Letters, 1998
- High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998