Ferroelectric memories: A comparison with other high-speed digital devices
- 1 April 1991
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 116 (1), 147-155
- https://doi.org/10.1080/00150199108007938
Abstract
A comparison of two- and three-terminal digital devices, especially those used for memories, is given, Emphasis is placed on parameters important for large-volume commercialization, as opposed to laboratory demonstrations of individual units. Transistors, Josephson junction “cryotrons”, optically bistable and spectral hole-burning systems are compared with ferroelectrics.Keywords
This publication has 20 references indexed in Scilit:
- Circuit models and applications of the superconducting field-effect transistorIEEE Journal of Solid-State Circuits, 1989
- 30-ps 7.5-GHz GaAs MESFET macrocell arrayIEEE Journal of Solid-State Circuits, 1989
- Physics of digital devicesReviews of Modern Physics, 1989
- Modelling of VLSI semiconductor manufacturing processesReports on Progress in Physics, 1989
- Ferroelectric Liquid Crystals. Material Properties and ApplicationsMolecular Crystals and Liquid Crystals Incorporating Nonlinear Optics, 1988
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- INVESTIGATIONS IN THE WORLD OF ULTRAFAST EVENTS WITH FEMTOSECOND OPTICAL PULSESLe Journal de Physique Colloques, 1987
- 280-ps 6-bit RCJL decoder using high drivability and unit circuit for a 1-kbit Josephson cache memoryIEEE Journal of Solid-State Circuits, 1987
- Three-terminal superconducting devicesIEEE Transactions on Magnetics, 1985