Modelling of VLSI semiconductor manufacturing processes
- 1 March 1989
- journal article
- review article
- Published by IOP Publishing in Reports on Progress in Physics
- Vol. 52 (3), 349-388
- https://doi.org/10.1088/0034-4885/52/3/003
Abstract
The manufacture of complex integrated circuits demanded by present-day system designers requires the assembly of a large number of interacting process steps. Many of these process steps cannot be chosen without considering the effect of the other steps involved in the manufacturing process. A great deal of understanding of the basic physical principles must be employed before a successful manufacturing process can be defined. The optimisation of the steps and their timely introduction to enable the device to enter the marketplace dictates that an efficient means of predicting the impact of a particular recipe must be employed. This review surveys the various physical principles that underly the processing steps, highlights some of the anomalous behaviour that occurs and describes the tools currently available to help the process physicist design diffusion, oxidation, ion implantation, deposition and photo-lithographic routines. An example of the use of these tools, and an indication of forthcoming developments, will be given.Keywords
This publication has 63 references indexed in Scilit:
- Nitrocellulose as a positive or negative self-developing resistJournal of Vacuum Science & Technology B, 1985
- A general solution method for two-dimensional nonplanar oxidationIEEE Transactions on Electron Devices, 1983
- Two-dimensional oxidationIEEE Transactions on Electron Devices, 1983
- Diffusion of indium in silicon inert and oxidizing ambientsJournal of Applied Physics, 1982
- Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kineticsJournal of Applied Physics, 1982
- The effect of phosphorus ion implantation on molybdenum/silicon contactsJournal of Applied Physics, 1981
- Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and SegregationJournal of the Electrochemical Society, 1978
- Optimization of Al step coverage through computer simulation and scanning electron microscopyJournal of Vacuum Science and Technology, 1978
- Microstructural Analysis of Evaporated and Pyrolytic Silicon Thin FilmsJournal of the Electrochemical Society, 1973
- The equilibrium topography of sputtered amorphous solids III. Computer simulationJournal of Materials Science, 1972