TEM studies of MOVPE (Ga,In)As interfaces with InP substrates
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 334-339
- https://doi.org/10.1016/0022-0248(84)90434-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growthJournal of Electronic Materials, 1981
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber MethodJapanese Journal of Applied Physics, 1980
- Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy techniqueProgress in Crystal Growth and Characterization, 1979