Growth of GaxIn1 −xAs and GaxIn1 −xAsyP1 −y using preformed adducts
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 96-101
- https://doi.org/10.1016/0022-0248(84)90403-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Adducts in the growth of III–V compoundsJournal of Crystal Growth, 1984
- TEM studies of MOVPE (Ga,In)As interfaces with InP substratesJournal of Crystal Growth, 1984
- Direct energy gap of Al1−xInxAs lattice matched to InPApplied Physics Letters, 1984
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- OMVPE growth of InP using TMInJournal of Crystal Growth, 1983
- Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic ProcessJournal of the Electrochemical Society, 1982
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981
- The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’SJournal of Electronic Materials, 1980
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975