Femtosecond Carrier Dynamics in GaAs Far from Equilibrium

Abstract
The dynamics of optically generated carriers in GaAs is investigated measuring transmission changes with ultrafast time and high spectral resolution. A novel two-color 15 fs Ti:sapphire laser system allows the observation of the femtosecond kinetics of energetic carrier distributions at excitation densities as low as 1015cm3. For the first time, LO phonon emission of highly excited nonequilibrium electrons is directly monitored. The contribution of the hole distribution to the data and the influence of carrier-carrier scattering is studied.