High-power V-band pseudomorphic InGaAs HEMT
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (5), 213-214
- https://doi.org/10.1109/55.79559
Abstract
The author's present the DC and RF power performance of planar-doped channel InGaAs high-electron-mobility transistors (HEMTs). The planar-doped channel (PDC) pseudomorphic GaAs HEMT with 400 mu m of gate width exhibited an output power of 184 mW, corresponding to 460 mW/mm, with 4.6-dB saturation gain and 25% power-added efficiency at 55 GHz. Although higher power density is possible, the authors have designed the device to operate at less than 500 mW/mm for thermal and reliability reasons. Devices with unit gate finger widths ranging from 30 to 50 mu m were fabricated and characterized, with no performance degradation observed from using the longer gate fingers.Keywords
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