The influence of non-linear interference processes on the HREM contrast of AlGaAs in 〈100〉 projection
- 28 February 1991
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 35 (2), 77-97
- https://doi.org/10.1016/0304-3991(91)90093-l
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- A theoretical analysis of HREM imaging for 〈110〉 tetrahedral semiconductorsUltramicroscopy, 1989
- EMS - a software package for electron diffraction analysis and HREM image simulation in materials scienceUltramicroscopy, 1987
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Debye–Waller factors of zinc-blende-structure materials – a lattice dynamical comparisonActa Crystallographica Section A Foundations of Crystallography, 1983
- Ge-GaAs superlattices by molecular beam epitaxyApplied Physics Letters, 1981
- Contrast transfer of crystal images in TEMUltramicroscopy, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- X-ray structure factors and the debye-waller factor of gallium arsenide crystals determined from full widths at half maximum of bragg case diffraction curvesPhysica Status Solidi (a), 1977
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Relativistic Hartree–Fock X-ray and electron scattering factorsActa Crystallographica Section A, 1968