Picosecond optical time-of-flight studies of carrier transport ina-Si:H–a-SiNx:H multilayers

Abstract

We report time-of-flight experiments in the time range from 0.2 psec to 1.8 nsec in a-Si:H–a-${\mathrm{SiN}}_{\mathrm{x}}$:H multilayer structures using a purely optical technique. The transport mechanism of photoexcited carriers is shown to be dispersive and its characteristic parameters are determined in the temperature range 70–300 K.