Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Coevaporation with Composition Monitor
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9A), L1141
- https://doi.org/10.1143/jjap.34.l1141
Abstract
The chemical composition of Cu(In, Ga)Se2 (CIGS) thin film was monitored in real time during the physical vapor deposition. The temperature of growing CIGS film was found to depend on the composition ratio of Cu/(In+Ga) when the film was deposited under constant heating power. The composition monitoring system can be easily applied to a 3-stage deposition process of the CIGS films. The solar cells (active area: 1 cm2) fabricated by using the obtained CIGS absorber layer showed an efficiency of 15.4% under standard AM 1.5 illumination.Keywords
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