High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures
- 30 April 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (4), 385-391
- https://doi.org/10.1016/0038-1101(84)90173-4
Abstract
No abstract availableKeywords
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