Growth of inversion domains in oxygen-rich aluminium nitride
- 15 July 1992
- journal article
- other
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 154 (2), L19-L24
- https://doi.org/10.1016/0921-5093(92)90354-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Inversion Domain Boundaries in Aluminum NitrideJournal of the American Ceramic Society, 1991
- Formation and Characterization of Amorphous Aluminum Nitride Powder and Transparent Aluminum Nitride Film by Chemical Vapor DepositionJournal of the American Ceramic Society, 1991
- Keramographische Untersuchungen an Aluminiumnitrid*) / Ceramographic Investigations of Aluminium Nitride*)Practical Metallography, 1991
- Luminescence Studies of Oxygen‐Related Defects In Aluminum NitrideJournal of the American Ceramic Society, 1990
- On the nature of the oxygen-related defect in aluminum nitrideJournal of Materials Research, 1990
- Effect of Additives on the Pressureless Sintering of Aluminum Nitride between 1500° and 1800°CJournal of the American Ceramic Society, 1989
- Extended defects in sintered AINJournal of Materials Science, 1989
- Role of Y2O3 and SiO2 Additions in Sintering of AINJournal of the American Ceramic Society, 1974
- Nonmetallic crystals with high thermal conductivityJournal of Physics and Chemistry of Solids, 1973
- Dimorphism of Para-DichlorobenzeneThe Journal of Chemical Physics, 1955