Carrier recombination at dislocations in epitaxial gallium phosphide layers
- 1 February 1977
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 12 (2), 341-346
- https://doi.org/10.1007/bf00566276
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electroluminescence in semiconductorsJournal of Luminescence, 1976
- Deep-level controlled lifetime and luminescence efficiency in GaPApplied Physics Letters, 1975
- Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxyJournal of Applied Physics, 1975
- Effects of dislocations on photoluminescent properties in liquid phase epitaxial GaPApplied Physics Letters, 1975
- Dislocations in vapor phase epitaxial GaPJournal of Electronic Materials, 1974
- Effects of dislocation density on the properties of liquid phase epitaxial GaAsJournal of Applied Physics, 1974
- Green electroluminescence in GaP diodes and its correlation with cathodoluminescence measurementsJournal of Physics D: Applied Physics, 1973
- Minority-carrier lifetimes and luminescence efficiencies in nitrogen-doped GaPApplied Physics Letters, 1973
- Effect of Dislocations on the Minority Carrier Lifetime in SemiconductorsPhysical Review B, 1956
- Effects of the Dislocations on Minority Carrier Lifetime in GermaniumJournal of the Physics Society Japan, 1955