Electrical characteristics of amorphous iron-tungsten contacts on silicon

Abstract

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, ρc=1×10−7 and ρc=2.8×10−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500 °C. A barrier height, φBn=0.61 V, was measured on n-type silicon.