Interface study in epitaxial vapour grown GaAs
- 31 May 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 9, 165-170
- https://doi.org/10.1016/0022-0248(71)90226-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor GrowthJournal of the Electrochemical Society, 1970
- Développements d'une technique de topographie en réflexion des rayons XJournal of Applied Crystallography, 1969
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965