Some observations on microplasmas in P-I-N diodes
- 31 May 1971
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (5), 428-430
- https://doi.org/10.1016/0038-1101(71)90196-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Computer calculations of avalanche-induced relaxation oscillations in silicon diodesIEEE Transactions on Electron Devices, 1968
- Negative resistance and filamentary currents in avalanching silicon p+-i-n+junctionsIEEE Transactions on Electron Devices, 1968
- Space-charge-induced negative resistance in avalanche diodesIEEE Transactions on Electron Devices, 1968
- Avalanche characteristics and failure mechanism of high voltage diodesIEEE Transactions on Electron Devices, 1966
- Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect JunctionsJournal of Applied Physics, 1963
- Uniform Silicon p-n Junctions. I. Broad Area BreakdownJournal of Applied Physics, 1960
- Visible Light Emission and Microplasma Phenomena in Silicon p–n Junction, I.Journal of the Physics Society Japan, 1960