Abstract
Current generation in hydrogenated amorphous silicon, a‐Si(H), was found to be predominately from the space‐charge region. The mobility‐lifetime (μτ) products were the order of 5×10−10 cm2/V for both holes and electrons. It was necessary to consider trapping and recombination of the optically generated carriers in the space charge region to interpret solar cell and spectral response data.

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