Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplers
- 23 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21), 1679-1681
- https://doi.org/10.1063/1.98541
Abstract
We report on the performance characteristics of InGaAs/GaAs strained-layer superlattice coplanar ridge-type directional couplers realized by molecular beam epitaxy. The measured power transfer characteristics with 1.15 μm incident photoexcitation demonstrate nonlinear coupling due to absorption associated with the tails of the excitonic resonances in the quantum wells. From a theoretical fit of the measured data, the nonlinear refractive index coefficient, n2, of the multiquantum well is found to be 2.25×10−7 cm2/W. This agrees very well with a value of n2=1.9×10−7 cm2/W obtained independently on the same material from interferometric measurements.Keywords
This publication has 5 references indexed in Scilit:
- Effects of saturation and loss on nonlinear directional couplersApplied Physics Letters, 1987
- Nonlinear guided waves coupled nonlinearly in a planar GaAs/GaAlAs multiple quantum well structureApplied Physics Letters, 1986
- All optical multiple-quantum-well waveguide switchElectronics Letters, 1985
- A novel electro-optically controlled directional-coupler switch in GaAs epitaxial layers at 1.15 µmIEEE Transactions on Electron Devices, 1982
- Strain-induced optical waveguiding in GaAs epitaxial layers at 1.15 μmElectronics Letters, 1979