Electron spin resonance observation of defects in device oxides damaged by soft x rays
- 8 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23), 1663-1665
- https://doi.org/10.1063/1.97761
Abstract
We report the use of vacuum soft x‐ray (VXR) exposure to efficiently generate paramagnetic defects in thin oxide layers. The VXR technique allows the observation of an E’ related defect called the 74‐G doublet in quantities as large as the E’. This defect is the first paramagnetic defect observed in thin oxides at room temperature to involve hydrogen.Keywords
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