Nanometer-scale electronic and microstructural properties of grain boundaries in Cu(In,Ga)Se2
- 15 January 2011
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 519 (21), 7341-7346
- https://doi.org/10.1016/j.tsf.2010.12.227
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cellsApplied Physics A, 2008
- Surface photovoltage analysis of thin CdS layers on polycrystalline chalcopyrite absorber layers by Kelvin probe force microscopyNanotechnology, 2008
- 19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factorProgress In Photovoltaics, 2008
- Microscopic characterization of individual grain boundaries in Cu-III–VI2 chalcopyritesThin Solid Films, 2007
- Formation of the physical vapor deposited CdS∕Cu(In,Ga)Se2 interface in highly efficient thin film solar cellsApplied Physics Letters, 2006
- Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin filmsApplied Physics A, 2005
- Electrical activity at grain boundaries ofthin filmsPhysical Review B, 2005
- Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device?Applied Physics Letters, 2004
- Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin filmsApplied Physics Letters, 2004
- Kelvin probe force microscopy for the nano scale characterization of chalcopyrite solar cell materials and devicesThin Solid Films, 2003