Long-range enhancement of boron diffusivity induced by a high-surface-concentration phosphorus diffusion
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (3), 224-226
- https://doi.org/10.1063/1.90738
Abstract
Enhanced boron diffusivity of buried implanted layers has been investigated when a shallow diffusion is performed with phosphorus. For low surface phosphorus concentration (19/cm3) no diffusion of boron was observed, but for higher values (≳1020/cm3) a strong diffusion occurs. This enhancement is a function of the distance between the boron layer and surface phosphorus diffusion. Results are explained by vacancy‐type defects generated during the phosphorus diffusion. A 30‐μm diffusion length is found for these defects.Keywords
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