A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interface
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 36 (6), 1800-1807
- https://doi.org/10.1109/23.45372
Abstract
No abstract availableThis publication has 46 references indexed in Scilit:
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