Analysis of plasma-grown GaAs oxide films
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7), 319-321
- https://doi.org/10.1063/1.89407
Abstract
Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion‐induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.Keywords
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